材料科学
椭圆偏振法
无定形固体
微晶
带隙
蓝宝石
吸收边
脉冲激光沉积
透射率
基质(水族馆)
光学
吸收(声学)
薄膜
沉积(地质)
分析化学(期刊)
光电子学
激光器
复合材料
结晶学
纳米技术
化学
古生物学
地质学
物理
冶金
海洋学
生物
色谱法
沉积物
作者
Hong Yang,Yao Liu,Xuguang Luo,Yao Li,Dong‐Sing Wuu,Kaiyan He,Zhe Chuan Feng
标识
DOI:10.1016/j.spmi.2019.05.028
摘要
A series of Ga2O3 films grown on sapphire substrate by pulsed laser deposition with different growth temperature (400–1000 °C) and different thickness (69–332 nm) were studied by X-ray diffraction, optical transmittance and spectroscopic ellipsometry. The phase was transformed from amorphous to polycrystalline β-Ga2O3 structure with increasing growth temperature. Refractive indexes increase with increasing thickness or growth temperature of the films in the transparent area, where the effect of film thickness is much more significant than that of growth temperature. The Urbach tail observed in absorption edge by ellipsometry combined with the transmittance spectra and the XRD intensities illustrate that higher growth temperature or thicker thickness can improve the crystal quality of films. The band gap of Ga2O3 films decrease with increasing growth film thickness and elevated experimental temperature (25–600 °C), and the quantitative analysis of temperature-dependent band gap was conducted by using the Varshni equation.
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