Accumulation channel vs. inversion channel 1.2 kV rated 4H-SiC buffered-gate (BG) MOSFETs: Analysis and experimental results

SiC power MOSFETs with improved high frequency figures-of-merit (HF-FOMs) are needed for various applications to reduce switching energy losses. This paper compares the electrical performance of novel 1.2 kV-rated 4H-SiC Accumulation channel (Accu) and Inversion channel (Inv) Buffered-Gate (BG) MOSFETs with conventional (C) and Split-Gate (SG) devices. It is demonstrated that Accu BG-MOSFETs exhibit 4.0× and 2.6× smaller HF-FOM [Ron×Qgd], and 3.6× and 2.1× smaller HF-FOM [Ron×Cgd], when compared to the Accu C-MOSFET and Accu SG-MOSFET, respectively.