Homogeneous Palladium Diselenide pn‐Junction Diodes for Reconfigurable Circuit Applications

Abstract Layered 2D materials, owing to their unique physical and electrical properties, have significant potential for use in future nanomaterial‐based electronic devices. Among these, palladium diselenide (PdSe 2 ) has recently emerged as a distinct 2D material with air stability and strong ambipolar property. In this study, the versatility of a PdSe 2 ‐based split‐gate field‐effect transistor (SG‐FET) using its stable ambipolar nature is demonstrated. By applying sequentially polarized SG biases, the PdSe 2 SG‐FET could be operated as a homogeneous and reconfigurable pn‐junction diode. The optimized h‐BN/PdSe 2 /h‐BN sandwich SG‐FET exhibits almost symmetric behaviors in the n‐ and p‐channel regions, enabling a reconfigurable single‐inversion AND (SAND) logic gate function, which can be used as a phase difference‐detection circuit composed only of a single component. It is believed that this approach to the reconfigurable diode and its circuit application paves the way for future 2D material‐based electronics.