Conductance Quantization in CH3NH3PbI3 Memristor

We report on the observation of conductance quantization (CQ) phenomenon in memristor devices with Au/CH ₃ NH ₃ PbI ₃ /FTO structure at room temperature. Under voltage-sweep measurements, conductance plateaus close to integer and half integer values of the quantized unit G ₀ = 2 e ² /h are observed in the SET/RESET process, which agree well with CQ behavior. The CQ mechanism of the memristor is studied and attributed to the formation and annihilation of atomic conductive filaments in CH ₃ NH ₃ PbI ₃ due to iodide ions migration. CQ behavior in CH ₃ NH ₃ PbI ₃ memristor would be useful for multi-level storage, and also, advance CH ₃ NH ₃ PbI ₃ for building quantum electronic devices.