锡
材料科学
外延
溅射
X射线光电子能谱
基质(水族馆)
分析化学(期刊)
薄膜
扫描电子显微镜
表面粗糙度
冶金
复合材料
纳米技术
化学工程
图层(电子)
化学
工程类
地质学
海洋学
色谱法
作者
Hsueh-I Chen,Kun‐An Chiu,Jing-Feng Lin,Kuan‐Yu Lin,Wei-Chia Chen,Ping-Hsun Wu,Cheng‐Jung Ko,Li Chang,Chunhua Chen
标识
DOI:10.1016/j.surfcoat.2022.128357
摘要
Growth of epitaxial TiN film on a semi-insulating single crystal (0001) SiC substrate has been achieved by DC magnetron reactive sputtering deposition. The effects of growth temperature and N2 flow ratio in Ar on film quality and growth rate were investigated. X-ray diffraction (XRD) characterization shows that all the deposited TiN films at 550 and 700 °C are heteroepitaxially grown on SiC with the epitaxial relationship between TiN and 4H-SiC in (111)TiN//(0001)SiC and [11¯0]TiN//[112¯0]4H-SiC. Increasing the N2 flow ratio from 4 to 8% results in improvement of the film quality and a decrease in the growth rate. The width of the X-ray rocking curve of TiN (111) reflection can reach a value as small as 249 arcsec and the resistivity of TiN film can be 21 μΩ·cm for deposition at 700 °C with 8% N2 flow ratio. Measurements by atomic force microscopy show that the surface roughness of the TiN film can be 1.1 nm. X-ray photoelectron spectroscopy reveals that TiN composition is nearly in stoichiometry for all the grown TiN films. Examinations by cross-sectional transmission electron microscopy show that TiN is directly grown on SiC and verify the epitaxial relationship from XRD.
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