兴奋剂
材料科学
钙钛矿(结构)
光电子学
半导体
二极管
背景(考古学)
杂质
工程物理
纳米技术
结晶学
化学
物理
古生物学
有机化学
生物
作者
Xueyuan Wei,Pengxiang Zhang,Yang Bai,Qi Chen
标识
DOI:10.1063/9780735423633_003
摘要
Doping is widely adopted in semiconductor device fabrication, such as in chips, solar cells, and light-emitting diodes, and plays an important role in improving the performance of the device. For traditional semiconductors, the main purpose of doping is to tailor their electronic properties. However, in the perovskite community, the doping technique is mainly discussed in the context of crystallography, such as the crystal structure, phase transition, and residual stress. Impurity doping effects on electronic properties have been largely unexplored. Here, we review doping strategies and their impacts on traditional semiconductors and halide perovskite materials. We focus on the effects of doping on the electrical properties of materials and their resultant devices, which include on their carrier concentration, conductivity, band structure, and carrier dynamics. This review is expected to provide inspiration for the design and processing of perovskite materials and their corresponding devices.
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