带隙基准
电压基准
CMOS芯片
电气工程
低功耗电子学
电压
材料科学
低压
开关电源
电流(流体)
功率(物理)
跌落电压
光电子学
电子工程
工程类
功率消耗
物理
量子力学
作者
Mohit Golhani,Rajesh Khatri,P. P. Bansod
标识
DOI:10.1109/ibssc53889.2021.9673414
摘要
We propose an efficient low voltage low power CMOS current mode bandgap voltage reference circuit for wide power supply range applications. The proposed circuit is designed in the SCL 180nm cmos process and provides a steady voltage reference of 500mV while running in the temperature range of -40°C to 125°C, as well as working normally with a large supply voltage range of 800mV to 10V. The traditional bandgap voltage reference circuit's BJT is replaced by a MOSFET functioning in the subthreshold region, which is ideal for low voltage applications. When supplied with a 1V supply, the tempeature coefficient of the CMOS current mode bandgap reference is 85.08 ppm/°C, and an achieved line regulation is 0.13mV/V. While burning a current of 5.13μA the total power dissipation is 5.13μW and the PSRR is -105.54 dB at DC frequency.
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