硅光子学
光互连
带宽(计算)
硅
CMOS芯片
材料科学
调制(音乐)
电子工程
光调制器
光电子学
光开关
互连
计算机科学
光子学
电信
物理
工程类
相位调制
声学
相位噪声
作者
Graham T. Reed,Goran Z. Mashanovich,Frédéric Y. Gardes,Dave J. Thomson
出处
期刊:Nature Photonics
[Springer Nature]
日期:2010-07-30
卷期号:4 (8): 518-526
被引量:2165
标识
DOI:10.1038/nphoton.2010.179
摘要
Optical technology is poised to revolutionize short-reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such an interconnect is the optical modulator. Modulators have been improved dramatically in recent years, with a notable increase in bandwidth from the megahertz to the multigigahertz regime in just over half a decade. However, the demands of optical interconnects are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics. Minimizing metrics such as the device footprint and energy requirement per bit, while also maximizing bandwidth and modulation depth, is non-trivial. All of this must be achieved within an acceptable thermal tolerance and optical spectral width using CMOS-compatible fabrication processes. This Review discusses the techniques that have been (and will continue to be) used to implement silicon optical modulators, as well as providing an outlook for these devices and the candidate solutions of the future. CMOS-compatible silicon optical modulators with high modulation speeds, large bandwidths, small footprints, low losses and ultralow power consumption are needed for current optical communications systems relying on highly integrated on-chip optical circuits. This Review summarizes the techniques used to implement silicon optical modulators, gives an outlook for these devices, and discusses the candidate solutions of the future.
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