带隙
兴奋剂
吸收(声学)
黄铜矿
杂质
半导体
凝聚态物理
分析化学(期刊)
谱线
磁性半导体
光致发光
作者
Teruo Teranishi,Katsuaki Sato,Ken'ichi Kondo
摘要
Optical absorptions have been measured in chalcopyrite, CuFeS 2 , and Fe-doped CuAlS 2 and CuGaS 2 . An extra absorption band with two peaks is observed at the low energy region of the absorption edge for Fe-doped CuAlS 2 and CuGaS 2 .Energy positions of two absorption peaks are 1.3 eV and 2.0 eV for CuAlS 2 and 1.2 eV and 1.9 eV for CuGaS 2 , respectively. The intensity of this absorption band increases with the increase of doped Fe ions and grows into the absorption edge of CuFeS 2 . Its oscillator strength comes up to 7·10 -2 . In chalcopyrite photoconductivity is observed and its maximum is just at the same energy region of the absorption edge. By comparing our results with those of absorption measurements for Cu- or Fe-doped ZnS it is concluded that this absorption band originates from the charge transfer transitions relating to 3d electron of Fe ions and the absorption edge of CuFeS 2 rises from the band-to-band transition corresponding to this charge transfer transition.
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