E.S. Yang,C. M. Wu,Hubert Vollmer,T. O. Sedgewick,R. T. Hodgson
出处
期刊：Applied Physics Letters [American Institute of Physics] 日期：1980-09-01卷期号：37 (5): 462-463被引量：8
标识
DOI：10.1063/1.91965
摘要
A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.
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