材料科学
兴奋剂
钙钛矿(结构)
四方晶系
离子
量子点
发光
光电子学
光致发光
卤化物
荧光粉
Crystal(编程语言)
分析化学(期刊)
晶体结构
化学
无机化学
结晶学
色谱法
有机化学
计算机科学
程序设计语言
作者
Wenzhi Wang,Shuo Song,Pin Lv,Jinkai Li,Bingqiang Cao,Zongming Liu
标识
DOI:10.1016/j.jlumin.2023.119894
摘要
All inorganic lead halide perovskite CsPbX3 (X = Cl, Br, and I) quantum dots (QDs) have gradually became an outstanding optoelectronic materials. Unfortunately, the presence of the toxic Pb2+ ions and extremely sensitive to oxygen, moisture and heat, greatly limits their practical application in the field of optoelectronic. Here, the Eu3+-doped CsPbCl3 perovskite QDs have been developed to solve these problems without affecting their optical properties. The low-Pb content Cs(Pb1-xEux)Cl3 (x = 0.1–0.5) perovskite QDs with cubic morphologies and high monodispersion are successfully prepared through using the improved hot-injection method. The doping of Eu3+ ions has no effect on the crystal structure, and maintain the tetragonal crystalline structure of CsPbCl3 host. The Eu3+-doped CsPbCl3 perovskite QDs exhibit four typical emissions, including the host emission at ∼430 nm and the Eu3+ emissions at ∼590 nm, ∼616 nm, as well as ∼695 nm. The relative PL intensity of Eu3+ emission increases with the Eu3+ doping content increasing, attributing to the energy transfer from the host to Eu3+ ions. Meanwhile, the positions of their typical emission bands can be tuned through adjusting the Eu3+ ions doping content, thus, the emission color of perovskite QDs can be controlled within a smaller wavelength range at the blue light area. The lifetimes for the CsPbCl3 host emission rapidly decreases due to the CsPbCl3 host → Eu3+ energy transfer. The temperature-dependent analysis are investigated, and the characteristics of the stimulated radiation for excitation fluence are observed at low temperatures. The relatively high activation energy indicates that the Cs(Pb1-xEux)Cl3 perovskite QDs have the high thermal stability. The Cs(Pb1-xEux)Cl3 with low toxicity and high thermal stability can further strengthen the competitiveness of perovskite QDs for optoelectronic device applications.
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