铁电性
单层
凝聚态物理
材料科学
要素(刑法)
铋
电介质
纳米技术
物理
光电子学
政治学
法学
冶金
作者
Jian Gou,Hua Bai,Xuanlin Zhang,Yu Huang,Sisheng Duan,Ariando Ariando,Shengyuan A. Yang,Lan Chen,Yunhao Lu,Andrew T. S. Wee
出处
期刊:Nature
[Nature Portfolio]
日期:2023-04-05
卷期号:617 (7959): 67-72
被引量:129
标识
DOI:10.1038/s41586-023-05848-5
摘要
Abstract Ferroelectric materials are fascinating for their non-volatile switchable electric polarizations induced by the spontaneous inversion-symmetry breaking. However, in all of the conventional ferroelectric compounds, at least two constituent ions are required to support the polarization switching 1,2 . Here, we report the observation of a single-element ferroelectric state in a black phosphorus-like bismuth layer 3 , in which the ordered charge transfer and the regular atom distortion between sublattices happen simultaneously. Instead of a homogenous orbital configuration that ordinarily occurs in elementary substances, we found the Bi atoms in a black phosphorous-like Bi monolayer maintain a weak and anisotropic s p orbital hybridization, giving rise to the inversion-symmetry-broken buckled structure accompanied with charge redistribution in the unit cell. As a result, the in-plane electric polarization emerges in the Bi monolayer. Using the in-plane electric field produced by scanning probe microscopy, ferroelectric switching is further visualized experimentally. Owing to the conjugative locking between the charge transfer and atom displacement, we also observe the anomalous electric potential profile at the 180° tail-to-tail domain wall induced by competition between the electronic structure and electric polarization. This emergent single-element ferroelectricity broadens the mechanism of ferroelectrics and may enrich the applications of ferroelectronics in the future.
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