Effect of excess Bi2O3/PbO on the structural and electrical properties of ternary 0.39Bi(Ni1/2Ti1/2)O3–0.20PbZrO3–0.41PbTiO3 ceramics

The ternary 0.39Bi(Ni1/2Ti1/2)O3–0.20PbZrO3–0.41PbTiO3:x(Bi2O3/PbO) [x = 0, 1, and 2 wt%] ceramics were synthesized via solid-state sintering technique. The impact of excess addition on structural and electrical properties was investigated. PXRD results confirmed the diffusion of excess addition in the 0.39Bi(Ni1/2Ti1/2)O3–0.20PbZrO3–0.41PbTiO3 (BNPZT) lattice, exhibiting the perovskite structure with major rhombohedral (R3c) and minor tetragonal (P4mm) phases. The microstructure of the samples exhibits average grain size distribution (<8 μm). The temperature and frequency-dependent dielectric measurement revealed the relaxor-like ferroelectric behaviour and curie temperature (Tc ∼290 °C) observed in BNPZT:1 Pb ceramics. The improved remnant polarization (Pr∼23.47 μC/cm2) and coercive field (Ec ∼16.13 kV/cm) were obtained in BNPZT:2 Pb ceramics. The enhanced piezoelectric charge coefficient (d33 ∼ 496 pC/N) and maximum strain (Smax ∼0.12 %) were obtained for BNPZT. The least asymmetric factor (γs) illustrates the lower concentration of inherent defects in BNPZT:1(Bi/Pb) ceramics. This study provides insight into microstructural and electrical properties tuning and paves the way for designing piezoelectric materials.