材料科学
钝化
兴奋剂
载流子寿命
光致发光
响应度
电子迁移率
钙钛矿(结构)
光电子学
比探测率
载流子
光电探测器
结晶学
硅
纳米技术
图层(电子)
化学
作者
Jun Xing,Yue Sun,Xiaorui Huang,Shengrong He,Ziyuan Huang,Ying Li,Wei Li,Weili Yu
标识
DOI:10.1002/adom.202303264
摘要
Abstract High‐performance light‐emitting/detecting bifunctional optoelectronic devices based on halide perovskites are hindered by the less efficient carrier transport and radiative recombination processes. The density of defects (i.e., surface and bulk defects) is the main factor affecting carrier transport, radiation recombination, and determining performance in perovskites. Therefore, techniques to effectively regulate defects are highly needed. Here, a convenient and effective strategy, electrical doping, is proposed to flexibly regulate defect density, resulting in dramatically enhanced light‐emitting (i.e., fluorescence and carrier lifetime) and light‐detecting performance (i.e., hole mobility, photo‐responsivity, and photo‐detectivity) simultaneously. An improved carrier transport model in CH 3 NH 3 PbBr 3 (MPB) single‐crystal thin‐film (SCTF) is proposed to elucidate the regulation mechanism of defects and carrier transport under electrical doping. These results show that the surface defect density can be effectively reduced by 47.49% under optimal electrical poling intensity (0.168 V µm −1 ), and photoluminescence intensity and carrier lifetime can be increased by 259% and 89.98%, respectively. Furthermore, planar MPB SCTF photodetector exhibits hole mobility increased by 14.97%, photo‐responsivity increased by 82.78%, and photo‐detectivity increased by 868% at 0.168 V µm −1 . Particularly, a record photo‐detectivity of 3.53 × 10 13 Jones is achieved under electrical doping. This study provides guidance for flexibly adjusting defect density and optimizing perovskite SCTFs light‐emitting/detecting bifunctional devices.
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