Prediction of bipolar VSi2As4 and VGe2As4 monolayers with high Curie temperature and strong …

Recent studies have demonstrated that two-dimensional intrinsic magnetic materials with high Curie temperature $({T}_{\text{c}})$ and large magnetic anisotropy energy (MAE) are highly desirable for future spintronics. After careful investigations through density functional theory, bipolar ${\mathrm{VSi}}_{2}{\mathrm{As}}_{4}$ and ${\mathrm{VGe}}_{2}{\mathrm{As}}_{4}$ monolayers, with semiconductor valence and conduction band edges fully spin polarized in different spin directions, are demonstrated to be highly stable and have in-plane ferromagnetism (FM) with large MAE of $\ensuremath{\sim}5.5$ meV. The FM interaction is found to be dominated by the superexchange between d orbitals of V atoms through p orbitals of anions. More interestingly, ${T}_{\text{c}}$ is estimated to be $\ensuremath{\sim}900$ K through Monte Carlo simulation, which is significantly higher than room temperature. In addition, both MAE and ${T}_{\text{c}}$ can be substantially regulated and increased under biaxial strain and the transition from FM semiconductors to metals will occur. Our calculations and analyses indicate that ${\mathrm{VSi}}_{2}{\mathrm{As}}_{4}$ and ${\mathrm{VGe}}_{2}{\mathrm{As}}_{4}$ monolayers are ideal systems for the fundamental understanding of magnetic physics as well as building blocks for magnetoelastic applications, high-temperature, or/and gate-tunable spintronic nanodevices.