异质结
范德瓦尔斯力
曲率
材料科学
凝聚态物理
电子能带结构
带隙
过渡金属
纳米技术
拉伸应变
光电子学
极限抗拉强度
化学
物理
量子力学
复合材料
几何学
催化作用
生物化学
数学
分子
作者
Shu Zhao,Changchun Yang,Ziye Zhu,Xiaoping Yao,Wenbin Li
标识
DOI:10.1038/s41524-023-01052-1
摘要
Abstract The effect of curvature on the band alignment of one-dimensional (1D) van der Waals (vdW) transition metal dichalcogenide (TMDC) heterostructures is studied by comprehensive first-principles calculations. We find that, as the diameter of a TMDC nanotube decreases, the combined effect of curvature-induced flexoelectricity and circumferential tensile strain causes a rapid lowering of the conduction band minimum, whereas the valence band maximum exhibits an initial lowering before rising. As individual TMDC nanotubes form coaxial heterostructures, the concerted effect of diameter-dependent band-edge levels and intertube coupling via flexovoltage can result in a transition of intertube band alignment from Type II to Type I in multiple heterostructural systems, including large-diameter MoSe 2 @WS 2 , MoTe 2 @MoSe 2 , and MoTe 2 @WS 2 heterostructures. These results lay down a foundation for the rational design of 1D vdW heterostructures.
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