Solar-blind ultraviolet photodetector based on Ti-doped Ga2O3/Si p–n heterojunction

A solar-blind ultraviolet photodetector based on Ti-doped Ga2O3/Si p–n heterojunction is demonstrated for the first time. It is found that the heterojunction quality forming between Ga2O3 and Si becomes better after Ti incorporation in Ga2O3. The current–voltage and temporal response measurements show that the detector based on Ti-doped Ga2O3/Si p–n heterojunction has a responsivity of 0.382 A/W and a fast rise time of 73 ms as well, which are much better than those undoped Ga2O3/Si p–n heterojunction analogues.