轨道能级差
部分
接受者
材料科学
有机电子学
表面改性
电子迁移率
有机太阳能电池
聚合物
结晶学
化学
有机化学
分子
物理化学
晶体管
光电子学
电压
物理
量子力学
凝聚态物理
作者
Zhen Jiang,Di Liu,Yang Wang,Wei Song,Dongsheng Yan,Ziyi Ge,Yunqi Liu
标识
DOI:10.1002/anie.202416669
摘要
Abstract n‐Type conjugated polymers featuring low‐lying lowest unoccupied molecular orbital (LUMO) energy levels are essential for achieving high‐performance n‐type organic thin‐film transistors (OTFTs) and organic thermoelectrics (OTEs). However, the synthesis of acceptors with strong electron‐withdrawing characteristics presents a significant challenge. Herein, a peripheral functionalization strategy is employed on the tricyclic framework anthracene by introducing dual N,O ‐bidentate BF 2 /B(CN) 2 groups to enhance its electron‐withdrawing capability. This approach successfully navigates synthetic challenges, leading to the development of two novel acceptor building blocks: DBNF and DBNCN. Compared to the counterparts with a single N,O ‐bidentate BF 2 /B(CN) 2 moiety, DBNF and DBNCN exhibit an extended π‐backbone, enhanced molecular packing, and improved electron‐withdrawing properties. Utilizing these innovative acceptor monomers, copolymers, PDBNF and PDBNCN, are synthesized, which exhibit considerably suppressed LUMO ≈−4.0 eV. The deep LUMO of PDBNF together with its favourable bimodal packing orientation leads to remarkable electron mobility of 3.04 cm 2 V −1 s −1 with improved stability in OTFTs. Importantly, efficient n‐doping in OTEs is achieved with PDBNCN, exhibiting exceptional conductivity of 95.5 S cm −1 and a maximum power factor of 147.8 μW m −1 K −2 —among the highest reported for solution‐processed n‐type polymers. This work underscores the effectiveness of introducing dual B←N and cyano functionalities in attaining high‐performance n‐type plastic electronics.
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