Vapor Growth of All-Inorganic 2D Ruddlesden–Popper Lead- and Tin-Based Perovskites

材料科学 钙钛矿(结构) 光电流 化学气相沉积 带隙 基质(水族馆) 密度泛函理论 热稳定性 薄膜 光电子学 化学工程 纳米技术 结晶学 计算化学 化学 海洋学 工程类 冶金 地质学
作者
Xinting Shuai,Siraj Sidhik,Mingrui Xu,Xiang Zhang,Michael C. De Siena,Laurent Pédesseau,Hao Zhang,Guanhui Gao,Anand B. Puthirath,Wenbin Li,Ayush Agrawal,Jianan Xu,Jin Hou,Jessica Persaud,Jeremy Daum,Anamika Mishra,Y. Wang,Róbert Vajtai,Claudine Katan,Mercouri G. Kanatzidis,Jacky Even,Pulickel M. Ajayan,Aditya D. Mohite
出处
期刊:ACS Applied Materials & Interfaces [American Chemical Society]
卷期号:16 (35): 46560-46569
标识
DOI:10.1021/acsami.4c05329
摘要

The 2D Ruddlesden–Popper (RP) perovskites Cs2PbI2Cl2 (Pb-based, n = 1) and Cs2SnI2Cl2 (Sn-based, n = 1) stand out as unique and rare instances of entirely inorganic constituents within the more expansive category of organic/inorganic 2D perovskites. These materials have recently garnered significant attention for their strong UV-light responsiveness, exceptional thermal stability, and theoretically predicted ultrahigh carrier mobility. In this study, we synthesized Pb and Sn-based n = 1 2D RP perovskite films covering millimeter-scale areas for the first time, utilizing a one-step chemical vapor deposition (CVD) method under atmospheric conditions. These films feature perovskite layers oriented horizontally relative to the substrate. Multilayered Cs3Pb2I3Cl4 (Pb-based, n = 2) and Cs3Sn2I3Cl4 (Sn-based, n = 2) films were also obtained for the first time, and their crystallographic structures were refined by combining X-ray diffraction (XRD) and density functional theory (DFT) calculations. DFT calculations and experimental optical spectroscopy support band-gap energy shifts related to the perovskite layer thickness. We demonstrate bias-free photodetectors using the Sn-based, n = 1 perovskite with reproducible photocurrent and a fast 84 ms response time. The present work not only demonstrates the growth of high-quality all-inorganic multilayered 2D perovskites via the CVD method but also suggests their potential as promising candidates for future optoelectronic applications.

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