钝化
蚀刻(微加工)
堆栈(抽象数据类型)
材料科学
光电子学
表面粗糙度
干法蚀刻
等离子体增强化学气相沉积
表面光洁度
硅
光学
纳米技术
复合材料
图层(电子)
计算机科学
物理
程序设计语言
作者
R. Preu,Marc Hofmann,F. J. Walter,Martin Zimmer,S. Eigner,Anke Lemke,L. Gautero,J. Rentsch
出处
期刊:23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
日期:2008-11-01
卷期号:: 1889-1892
被引量:8
标识
DOI:10.4229/23rdeupvsec2008-2dv.1.15
摘要
Single side etching technologies will gain more and more importance when high efficiency cell structures with passivated and locally contacted rear side will enter industrial production. Within this paper different etching approaches for the solar cells rear, either dry or wet chemically, have been investigated in terms of resulting surface topography, and, combined with subsequent PECVD stack passivation, in terms of surface recombination velocity and optical performance. Correlations between surface roughness, surface recombination velocity and final Voc potential have been taken. Thin (130 µm) passivated and locally LFC contacted Cz-Si solar cells have been processed implementing the different etching sequences reaching up to 4 % relative higher short circuit currents compared to Al-BSF reference cells with maximum efficiency of 16.2 %.
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