The influence of Ga doping on preparation and thermoelectric properties of flexible Ag2Se films

Herein, we prepared Ga doped Ag2Se flexible films on porous nylon membrane. First, Se nanowires (NWs) were wet chemically synthesized, then different amounts of Ga doped Ag2Se (Ag2-xGaxSe, x = 0.01, 0.02, 0.04) NWs were prepared using the Se NWs as templates in solution at 80 °C, and finally the Ga doped Ag2Se films on porous nylon membrane were fabricated by vacuum assisted filtration and then hot pressing at 230 °C and 1 MPa for 30 min. The Ag1.98Ga0.02Se film exhibits a higher power factor of ~1162 μW m−1 K−2 at 300 K and a superior flexibility: after bending for 1000 cycles around a 4-mm-radius rod, about 97% of the initial electrical conductivity is maintained.