钝化
材料科学
钙钛矿(结构)
锡
基质(水族馆)
晶界
能量转换效率
薄膜
复合材料
光电子学
纳米技术
冶金
微观结构
图层(电子)
结晶学
化学
地质学
海洋学
作者
Manman Hu,Riming Nie,Hyeonwoo Kim,Jianchang Wu,Shanshan Chen,Byung‐wook Park,Gwisu Kim,Hyoung-Woo Kwon,Sang Il Seok
出处
期刊:ACS energy letters
[American Chemical Society]
日期:2021-09-15
卷期号:6 (10): 3555-3562
被引量:45
标识
DOI:10.1021/acsenergylett.1c01575
摘要
The passivation of electronic defects at the surfaces and grain boundaries of perovskite materials is one of the most important strategies for suppressing charge recombination in perovskite solar cells (PSCs). Although several passivation molecules have been investigated, few studies have focused on their application in regulating both the surface passivation and residual strain of perovskite films. In this study, the residual strain distribution profiles of the Cs0.1FA0.9SnI3 perovskite thin films and their effect on the photovoltaic device efficiencies were investigated. We found a gradient distribution of the out-of-plane compressive strain that correlated with the compositional inhomogeneity perpendicular to the substrate surface. By deliberately engineering dual effects of the surface passivation and residual strain, we achieved a record power conversion efficiency of up to 9.06%, the highest ever reported in a typical n–i–p architecture.
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