Influence of Different Laser Parameters in Laser Doping from Phosphosilicate Glass

The choice of laser parameters for a laser doping process (1, 2) is investigated. Solid state lasers with different pulse- and wavelengths were used for laser doping. Sheet resistances and silicon bulk lifetimes of irradiated samples are presented. Additionally, secondary ion mass spectroscopy (SIMS) profiles of the laser processed samples were acquired. Emitter saturation current density J0e data of lowly doped and laser doped emitters are shown. Scanning electron microscope images of laser processed random pyramids surfaces at different pulse lengths are shown and compared.