材料科学
无定形固体
半导体
非晶硅
电子迁移率
费米能级
非晶半导体
凝聚态物理
化学物理
无定形碳
硅
电子
光电子学
晶体硅
结晶学
化学
物理
量子力学
作者
Mayank Chakraverty,V. N. Ramakrishnan
出处
期刊:Materials Science Forum
日期:2022-01-04
卷期号:1048: 182-188
被引量:1
标识
DOI:10.4028/www.scientific.net/msf.1048.182
摘要
This paper demonstrates the transport of electron and hole carriers in two distinct hydrogenated amorphous semiconductor materials at different temperatures. Compared to crystalline materials, the amorphous semiconductors differ structurally, optically and electrically, hence the nature of carrier transport through such amorphous materials differ. Materials like hydrogenated amorphous silicon and amorphous IGZO have been used for the study of temperature dependent carrier transport in this paper. Simulation results have been presented to show the variation of free electron and hole concentration, trapped electron and hole concentration with energy at 300K for both the materials. The change in mobility with a change in the Fermi level has been plotted for different temperatures. The effect of temperature on Brownian motion mobility of electrons and holes in hydrogenated amorphous silicon and amorphous IGZO has been demonstrated towards the end of this paper.
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