光致发光
量子产额
单层
二硫化钼
材料科学
光电子学
产量(工程)
二极管
激光器
载流子寿命
量子效率
纳秒
光化学
纳米技术
化学
光学
物理
硅
冶金
荧光
作者
Matin Amani,Der‐Hsien Lien,Daisuke Kiriya,Jianwei Xiao,Angelica Azcatl,Jiho Noh,Surabhi R. Madhvapathy,Rafik Addou,Santosh KC,Megha Dubey,K. Cho,Robert M. Wallace,Si‐Chen Lee,Jr‐Hau He,Joel W. Ager,Xiang Zhang,Eli Yablonovitch,Ali Javey
出处
期刊:Science
[American Association for the Advancement of Science (AAAS)]
日期:2015-11-27
卷期号:350 (6264): 1065-1068
被引量:1022
标识
DOI:10.1126/science.aad2114
摘要
Two-dimensional (2D) transition metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure of merit, the room-temperature photoluminescence quantum yield (QY), is extremely low. The prototypical 2D material molybdenum disulfide (MoS2) is reported to have a maximum QY of 0.6%, which indicates a considerable defect density. Here we report on an air-stable, solution-based chemical treatment by an organic superacid, which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by more than two orders of magnitude. The treatment eliminates defect-mediated nonradiative recombination, thus resulting in a final QY of more than 95%, with a longest-observed lifetime of 10.8 ± 0.6 nanoseconds. Our ability to obtain optoelectronic monolayers with near-perfect properties opens the door for the development of highly efficient light-emitting diodes, lasers, and solar cells based on 2D materials.
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