系统间交叉
激子
单重态
光化学
有机发光二极管
光子上转换
化学
兴奋剂
量子效率
电致发光
光电子学
材料科学
物理
纳米技术
原子物理学
激发态
图层(电子)
量子力学
作者
In Seob Park,Hyukgi Min,Takuma Yasuda
出处
期刊:Angewandte Chemie
[Wiley]
日期:2022-05-27
卷期号:61 (31): e202205684-e202205684
被引量:231
标识
DOI:10.1002/anie.202205684
摘要
Abstract Narrowband emissive organoboron emitters featuring the multi‐resonance (MR) effect have now become a critical material component for constructing high‐performance organic light‐emitting diodes (OLEDs) with pure emission colors. These MR organoboron emitters are capable of exhibiting high‐efficiency narrowband thermally activated delayed fluorescence (TADF) by allowing triplet‐to‐singlet reverse intersystem crossing (RISC). However, RISC involving spin‐flip exciton upconversion is generally the rate‐limiting step in the overall TADF; hence, a deeper understanding and precise control of the RISC dynamics are ongoing crucial challenges. Here, we introduce the first MR organoboron emitter ( CzBSe ) doped with a selenium atom, demonstrating a record‐high RISC rate exceeding 10 8 s −1 , which is even higher than its fluorescence radiation rate. Furthermore, the spin‐flip upconversion process in CzBSe can be accelerated by factors of ≈20000 and ≈800, compared to those of its oxygen‐ and sulfur‐doped homologs ( CzBO and CzBS ), respectively. Unlike CzBO and CzBS , the photophysical rate‐limiting step in CzBSe is no longer RISC, but the fluorescence radiation process; this behavior is completely different from the conventional time‐delaying TADF limited by the slow RISC. Benefitting from its ultrafast exciton spin conversion ability, OLEDs incorporating CzBSe achieved a maximum external electroluminescence quantum efficiency as high as 23.9 %, accompanied by MR‐induced blue narrowband emission and significantly alleviated efficiency roll‐off features.
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