系统间交叉
激子
单重态
光化学
有机发光二极管
光子上转换
化学
兴奋剂
量子效率
电致发光
光电子学
材料科学
物理
纳米技术
原子物理学
激发态
图层(电子)
量子力学
作者
In Seob Park,Hyukgi Min,Takuma Yasuda
标识
DOI:10.1002/anie.202205684
摘要
Narrowband emissive organoboron emitters featuring the multi-resonance (MR) effect have now become a critical material component for constructing high-performance organic light-emitting diodes (OLEDs) with pure emission colors. These MR organoboron emitters are capable of exhibiting high-efficiency narrowband thermally activated delayed fluorescence (TADF) by allowing triplet-to-singlet reverse intersystem crossing (RISC). However, RISC involving spin-flip exciton upconversion is generally the rate-limiting step in the overall TADF; hence, a deeper understanding and precise control of the RISC dynamics are ongoing crucial challenges. Here, we introduce the first MR organoboron emitter (CzBSe) doped with a selenium atom, demonstrating a record-high RISC rate exceeding 108 s-1 , which is even higher than its fluorescence radiation rate. Furthermore, the spin-flip upconversion process in CzBSe can be accelerated by factors of ≈20000 and ≈800, compared to those of its oxygen- and sulfur-doped homologs (CzBO and CzBS), respectively. Unlike CzBO and CzBS, the photophysical rate-limiting step in CzBSe is no longer RISC, but the fluorescence radiation process; this behavior is completely different from the conventional time-delaying TADF limited by the slow RISC. Benefitting from its ultrafast exciton spin conversion ability, OLEDs incorporating CzBSe achieved a maximum external electroluminescence quantum efficiency as high as 23.9 %, accompanied by MR-induced blue narrowband emission and significantly alleviated efficiency roll-off features.
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