材料科学
钙钛矿(结构)
卤化物
光电子学
可见光谱
纳米技术
无机化学
化学工程
工程类
化学
作者
Ying Su,Xuejiao Chen,Wenyu Ji,Qinghui Zeng,Zhongyuan Ren,Zisheng Su,Lei Liu
标识
DOI:10.1021/acsami.7b10612
摘要
CsPbX3 (X = Cl, Br, I) perovskite quantum dots (PQDs) have been intensively investigated on photoelectric devices due to their superior optical properties. To date, the stability of CsPbX3 PQDs is still an open challenge. The previous mixed-halide CsPbX3 PQDs were generally obtained via the anion-exchange method at 40 °C. Here, the single- and mixed-halide CsPbX3 PQDs are synthesized at high temperature via the hot injection technique. The surface ligands could thus be strongly coordinated onto the surface of the PQDs, which dramatically improve the optical properties of the PQDs. The resulting CsPbX3 PQDs have high quantum yield (QY, 40-95%), narrow full width at half-maximum (FWHM) (the narrowest FWHM <10 nm), tunable band gap (408-694 nm), and highly strong photostability. The variation of their emission peaks upon anion atoms is well-supported by the theoretical band gaps calculated by the density functional theory calculations with the alloy formula correction. Hence, these PQDs show great potential as good candidates for photoelectric devices.
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