价(化学)
带隙
物理
导带
半导体
结晶学
价带
凝聚态物理
材料科学
原子物理学
化学
量子力学
电子
作者
Su‐Huai Wei,Alex Zunger
出处
期刊:Physical review
日期:1999-08-15
卷期号:60 (8): 5404-5411
被引量:585
标识
DOI:10.1103/physrevb.60.5404
摘要
We have studied systematically the chemical trends of the band-gap pressure coefficients of all group IV, III-V, and II-VI semiconductors using first-principles band-structure method. We have also calculated the individual ``absolute'' deformation potentials of the valence-band maximum (VBM) and conduction-band minimum (CBM). We find that (1) the volume deformation potentials of the ${\ensuremath{\Gamma}}_{6c}$ CBM are usually large and always negative, while (2) the volume deformation potentials of the ${\ensuremath{\Gamma}}_{8v}$ VBM state are usually small and negative for compounds containing occupied valence d state but positive for compounds without occupied valence d orbitals. Regarding the chemical trends of the band-gap pressure coefficients, we find that (3) ${a}_{p}^{\ensuremath{\Gamma}\ensuremath{-}\ensuremath{\Gamma}}$ decreases as the ionicity increases (e.g., from $\mathrm{G}\stackrel{\ensuremath{\rightarrow}}{e}\mathrm{GaA}\stackrel{\ensuremath{\rightarrow}}{s}\mathrm{ZnSe}),$ (4) ${a}_{p}^{\ensuremath{\Gamma}\ensuremath{-}\ensuremath{\Gamma}}$ increases significantly as anion atomic number increases (e.g., from $\mathrm{Ga}\stackrel{\ensuremath{\rightarrow}}{N}\mathrm{Ga}\stackrel{\ensuremath{\rightarrow}}{P}\mathrm{GaA}\stackrel{\ensuremath{\rightarrow}}{s}\mathrm{GaSb}),$ (5) ${a}_{p}^{\ensuremath{\Gamma}\ensuremath{-}\ensuremath{\Gamma}}$ decreases slightly as cation atomic number increases (e.g., from $\mathrm{AlA}\stackrel{\ensuremath{\rightarrow}}{s}\mathrm{GaA}\stackrel{\ensuremath{\rightarrow}}{s}\mathrm{InAs}),$ (6) the variation of ${a}_{p}^{\ensuremath{\Gamma}\ensuremath{-}L}$ are relatively small and follow similar trends as ${a}_{p}^{\ensuremath{\Gamma}\ensuremath{-}\ensuremath{\Gamma}},$ and (7) the magnitude of ${a}_{p}^{\ensuremath{\Gamma}\ensuremath{-}X}$ are small and usually negative, but are sometimes slightly positive for compounds containing first-row elements. Our calculated chemical trends are explained in terms of the energy levels of the atomic valence orbitals and coupling between these orbital. In light of the above, we suggest that ``empirical rule'' of the pressure coefficients should be modified.
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