材料科学
透射电子显微镜
扫描电子显微镜
复合材料
矩形
变形(气象学)
硅
热氧化
聚焦离子束
表面光洁度
压力(语言学)
形态学(生物学)
光学
光电子学
离子
纳米技术
化学
几何学
哲学
物理
生物
有机化学
遗传学
语言学
数学
作者
Junichi Takahashi,Tai Tsuchizawa,Toshifumi Watanabe,S. Itabashi
出处
期刊:Journal of vacuum science & technology
[American Vacuum Society]
日期:2004-09-01
卷期号:22 (5): 2522-2525
被引量:39
摘要
Progress in sidewall morphology smoothing of Si wire waveguides by thermal oxidization was observed using a focused-ion-beam (FIB) transmission-electron-microscopy technique. The roughness of Si∕SiO2 interface was drastically reduced with increasing oxidation time and temperature. Deformation of the cross-sectional profile of the waveguides was observed with secondary electron images of scanning FIB irradiation. The initial rectangular profile is transformed due to stress concentration at the rectangle corners at oxidation temperatures of 900 and 1000°C. In contrast, at 1100°C, the profile maintains the original rectangular profile due to the stress release by the viscous flowing of SiO2. These results indicate that the optimum oxidation condition for the Si wire waveguide has been found, which provides an extremely smooth sidewall without deformation of the cross-sectional profile.
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