材料科学
氧化铟锡
光电子学
光学
激光器
二极管
栅栏
连续波
制作
半最大全宽
半导体激光器理论
图层(电子)
复合材料
病理
替代医学
物理
医学
作者
Haojun Zhang,Daniel A. Cohen,Philip Chan,Matthew S. Wong,Shlomo Mehari,Daniel L. Becerra,Shuji Nakamura,Steven P. DenBaars
出处
期刊:Optics Letters
[Optica Publishing Group]
日期:2019-06-10
卷期号:44 (12): 3106-3106
被引量:28
摘要
A novel approach to realize DFB gratings on GaN based laser diodes is presented and continuous-wave single longitudinal mode operation is achieved. The first order gratings were fabricated on the surface of indium tin oxide (ITO) on top of the laser ridge, which combines the benefits of simplified fabrication, easy scalability to wider ridges, and no regrowth or overgrowth. Under continuous-wave operation, the laser emits with a full FWHM of 5 pm, a SMSR of 29 dB and output power from a single facet as high as 80 mW. To the best of authors' knowledge, this is also the first demonstration of a DFB-LD on semipolar InGaN/GaN system.
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