拉曼光谱
金属有机气相外延
杂质
材料科学
Crystal(编程语言)
光学
纳米技术
化学
图层(电子)
物理
外延
计算机科学
有机化学
程序设计语言
作者
Hui Liao,Tiantian Wei,Hui Zong,Shengxiang Jiang,Junchao Li,Yue Yang,Guanlong Yu,Peijun Wen,Rui Lang,Wenjie Wang
标识
DOI:10.1016/j.apsusc.2019.05.346
摘要
Raman measurement was applied to investigate the carrier concentration distribution along the [0001] direction of single GaN microrod. By measuring the Raman shifts of longitudinal phonon-plasmon (LPP) modes at different locations, the carrier concentration distributions along the sidewall of the microrod were obtained in the [0001] direction. It was found that the carrier concentration at the bottom of the microrod was 9.07×1016 cm−3, which was higher than that at the top. Carrier concentration gradient existed along the growth direction of the microrod. This was mainly due to the uneven distribution of some donor impurities (eg: oxygen impurities) during the growth process. Furthermore, based on the E2high mode, the distributions of residual stress and crystal qualities were characterized along the [0001] direction.
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