材料科学
光电子学
硅
涂层
电介质
太阳能电池
晶体硅
图层(电子)
等效串联电阻
电容
基质(水族馆)
泄漏(经济)
堆栈(抽象数据类型)
复合材料
电压
电气工程
电极
化学
工程类
程序设计语言
海洋学
经济
物理化学
计算机科学
宏观经济学
地质学
作者
Chunlan Zhou,Junjie Zhu,Sean Erik Foss,H. Haug,Ørnulf Nordseth,Erik Stensrud Marstein,Wenjing Wang
标识
DOI:10.1016/j.egypro.2015.07.061
摘要
Anti-reflection coating (ARC) on crystalline silicon solar cell plays an important role in preventingpotential induced degradation (PID). In this work, we present a dual-layer ARC for increased resistance to potential induced degradation. By introducing a thin SiOyNx layer between the SiNx layer and the Si substrate, animproved chemical surface passivationwas obtained. A 0.1% absolute gainin conversion efficiencywas obtained compared to the result of single SiNx coated multi-crystalline solar cell. In addition, the SiOyNx/SiNx stack increased the resistance to PID, showing a nearly zero degradation in shunt resistance (Rsh) after a 24 hours PID-sensitivity test, performedat high voltage (-1000 V) and 60oC. In comparison, the Rsh of multi-crystalline silicon solar cellscoated with singleSiNx layer degraded by 30%. Capacitance-voltageand leakage current measurements indicate that the main factor for PID-sensitivity was the dielectric layer, especially the charge trappingcenters in the dielectric. The tocharge trapping center degrades both the quality of the dielectric/substrate interface and increases the leakage current.
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