双极结晶体管
晶体管
光电子学
材料科学
门驱动器
电气工程
逻辑门
计算机科学
异质结双极晶体管
门极关断晶闸管
结温
电压
可靠性(半导体)
共发射极
作者
C.S. Mitter,Allen R. Hefner,D.Y. Chen,F.C. Lee
出处
期刊:IEEE Transactions on Industry Applications
[Institute of Electrical and Electronics Engineers]
日期:1994-01-01
卷期号:30 (1): 24-33
被引量:47
摘要
A physics-based model for the insulated gate bipolar transistor (IGBT) is implemented into the widely available circuit simulation package IG-SPICE. Based on analytical equations describing the semiconductor-physics, the model accurately describes the nonlinear junction capacitances, moving boundaries, recombination, and carrier scattering, and effectively predicts the device conductivity modulation. In this paper, the procedure used to incorporate the model into IG-SPICE and various methods necessary to ensure convergence are described. The effectiveness of the SPICE-based IGBT model is demonstrated by investigating the static and dynamic current sharing of paralleled IGBTs with different device model parameters. The simulation results are verified by comparison with experimental results. >
科研通智能强力驱动
Strongly Powered by AbleSci AI