Effect of electron beam irradiation on thermally evaporated Ge2Sb2Te5 thin films

Ge2Sb2Te5 (GST) thin films have been grown by thermal evaporation technique. The grown films have been irradiated with electron beam at various doses. As-deposited and irradiated films have been characterized for their structural, optical and electrical properties. Raman spectra has been recorded to get more insight on structural rearrangement that happened during the irradiation process. Detailed analysis of these data has been made to explore the behavior of system under electron irradiation environment