记忆电阻器
与非门
闪存
块(置换群论)
计算机科学
维数(图论)
横杆开关
德拉姆
非易失性存储器
闪光灯(摄影)
电气工程
计算机硬件
电信
工程类
物理
频道(广播)
光学
纯数学
数学
几何学
作者
Shuang Pi,Can Li,Hao Jiang,Weiwei Xia,Huolin L. Xin,Junqi Yang,Qiangfei Xia
出处
期刊:Cornell University - arXiv
日期:2018-04-26
被引量:7
标识
DOI:10.1038/s41565-018-0302-0
摘要
Memristor is a promising building block for the next generation nonvolatile random access memory and bio-inspired computing systems. Organizing memristors into high density crossbar arrays, although challenging, is critical to meet the ever-growing high capacity and low energy demands of these applications especially in the big data era. Here, we construct memristor crossbars with a single-layer density up to 4.5 terabits per inch square, an order of magnitude denser than the state- of-the-art 64-layer triple level cell NAND flash technology. The memristors in the crossbars are 2 $\times$ 2 nm$^2$ in size, capable of switching with tens of nano ampere electric current. The densely packed memristor crossbars of extremely small working devices provides a power-efficient solution for high density information storage and processing.
科研通智能强力驱动
Strongly Powered by AbleSci AI