材料科学
石墨烯
超级电容器
拉曼光谱
纳米技术
电阻式触摸屏
表征(材料科学)
扫描电子显微镜
电子转移
化学工程
光电子学
电容
电极
复合材料
计算机科学
计算机视觉
光学
物理
工程类
物理化学
有机化学
化学
作者
Gopinath Sahoo,Subrata Ghosh,S. R. Polaki,Tom Mathews,M. Kamruddin
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2017-09-13
卷期号:28 (41): 415702-415702
被引量:37
标识
DOI:10.1088/1361-6528/aa8252
摘要
Vertical graphene nanosheets (VGNs) are the material of choice for next-generation electronic device applications. The growing demand for flexible devices in electronic industry brings in restriction on growth temperature of the material of interest. However, VGNs with better structural quality is usually achieved at high growth temperatures. The difficulty associated with the direct growth on flexible substrates can overcome by adopting an effective strategy of transferring the well grown VGNs onto arbitrary flexible substrates through soft chemistry route. Hence, we demonstrated a simple, inexpensive and scalable technique for the transfer of VGNs onto arbitrary substrates without disrupting its morphology and structural properties. After transfer, the morphology, chemical structure and electronic properties are analyzed by scanning electron microscopy, Raman spectroscopy and four probe resistive methods, respectively. Associated characterization investigation indicates the retention of morphological, structural and electrical properties of transferred VGNs compared to as-grown one. Furthermore the storage capacity of the VGNs transferred onto flexible substrates is also examined. A very lower sheet resistance of 0.67 kOhm/sq. and excellent supercapacitance of 158 micro-Farrad/cm2 with 91.4% retention after 2000 cycles confirms the great prospective of this damage-free transfer approach of VGNs for flexible nanoelectronic device applications
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