功勋
欧姆接触
钻石
凝聚态物理
兴奋剂
二极管
空间电荷
半导体
带隙
宽禁带半导体
肖特基二极管
参数空间
材料科学
物理
光电子学
纳米技术
量子力学
电子
数学
几何学
图层(电子)
复合材料
作者
Surdi, Harshad,Thornton, Trevor,Nemanich, Robert J.,Goodnick, Stephen M.
摘要
An interpretation of the unipolar figure of merit is formulated for wide bandgap (WBG) semiconductors based on the on-state specific resistance ([Formula: see text]) derived from the space charge limited current–voltage relationship (Mott–Gurney square law). The limitations of the traditional Ohmic [Formula: see text] for WBG semiconductors are discussed, particularly at low doping, while the accuracy of the Mott–Gurney based [Formula: see text] is confirmed by Silvaco ATLAS drift–diffusion simulations of diamond Schottky pin diodes. The effects of incomplete ionization are considered as well.
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