钝化
材料科学
太阳能电池
异质结
非晶硅
晶体硅
降级(电信)
硅
能量转换效率
图层(电子)
光电子学
纳米技术
计算机科学
电信
作者
Kai Jiang,Yuhao Yang,Yan Zhu,Shenglei Huang,Xiaodong Li,Zhenfei Li,Yinuo Zhou,Liping Zhang,Fanying Meng,Zhengxin Liu,Wenzhu Liu
标识
DOI:10.1016/j.solmat.2022.111801
摘要
Consideration must be given to both surface passivation and stability for the design of intrinsic hydrogenated amorphous silicon (a-Si:H(i)) films for silicon heterojunction (SHJ) solar cells. Although the underdense a-Si:H(i) films could offer outstanding surface passivation and lead to a high cell efficiency, it was hard for such a porous structure to prevent the intrusion of sodium-ion (Na+) and moisture during Na+ aging test, resulting in the serious degradation of cell efficiency. Hence, we replaced the a-Si:H(i) film at the sun side with the a-SiOx:H(i) film and applied 20-s hydrogen plasma treatment to the underdense a-Si:H(i) film at the rear side in order to reduce the porosity of the a-Si:H(i) films without epitaxial growth. Additionally, an 80-nm SiOx layer was capped on the rear side of the optimized SHJ solar cells as a protective layer, leading to a high efficiency of 22.23% and the negligible degradation of only 0.27%abs after 3-h Na+ aging test. This work offers a valid approach to balancing both the high efficiency and high stability of SHJ solar cells, which may guide the optimization of SHJ solar cells for real applications.
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