Gate‐Tunable Surface Processes on a Single‐Nanowire Field‐Effect Transistor

Surface chemical processes occurring on a Pd-nanoparticle-decorated tin oxide (SnO2) nanowire configured as a field-effect transistor (FET) can be strongly influenced by the gate potential if a high dielectric constant material is used as the gate oxide. Dramatic changes in channel currents are produced as a consequence when the device is exposed to hydrogen while operated in its depletion region, providing an example of gate-potential directed surface chemistry. Detailed facts of importance to specialist readers are published as "Supporting Information". Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.