Ferroelectric tunnel junctions for information storage and processing

Computer memory based on ferroelectric polarization is a promising alternative to technologies based, for example, on magnetism. Here, Garcia and Bibes review how ferroelectric tunnel junctions, where ferroelectric polarization controls electrical resistance, could improve the performance of these devices. Computer memory that is non-volatile and therefore able to retain its information even when switched off enables computers that do not need to be booted up. One of the technologies for such applications is ferroelectric random access memories, where information is stored as ferroelectric polarization. To miniaturize such devices to the size of a few nanometres, ferroelectric tunnel junctions have seen considerable interest. There, the electric polarization determines the electrical resistance of these thin films, switching the current on and off. With control over other parameters such as magnetism also being possible, ferroelectric tunnel junctions represent a promising and flexible device design.