High quality of IWO films prepared at room temperature by reactive plasma deposition for photovoltaic devices

High-quality tungsten-doped indium oxide (IWO) films are deposited on glass substrates at room temperature by the reactive plasma deposition (RPD) process under different oxygen/argon (O2/Ar) ratios. It is revealed that the O2/Ar ratio plays an important role in obtaining high conductivity without compromising the optical transmission of the films. The effect of the annealing temperature on the structure, electrical and optical properties of IWO thin films is investigated. The as-deposited film is crystalline and then re-crystallizes by postannealing. In this work, the IWO film with the O2/Ar ratio of 14% annealed at 220 °C exhibits the best electrical conductivity, with a lowest resistivity of 3.34 × 10−4 Ω cm and a highest mobility of 77.8 cm2 V−1 s−1, and which has the average transmittance of 85.50% (visible region) and 94.21% (near-infrared region). These optical and electrical characteristics of IWO films make them suitable for a-Si/C–Si heterojunction solar cell applications.