Evaluation of Schottky contact parameters in MSM-photodiode structures

The electrical behavior of metal-semiconductor-metal (MSM) Schottky barrier photodiode structures is analyzed by means of current-voltage (I-V) measurements at different temperatures. The reverse characteristics of the Schottky contact are examined by taking into account the barrier height dependence on the electric field and tunneling through the barrier. It is shown that, under these conditions the I-V measurements can be used as a fast and simple method to evaluate the barrier height, saturation current density and junction ideal factor of the MSM-photodiode Schottky contact. The results are well consistent with experiment.