Transport phenomena of crystal growth—heat and mass transfer

Selected fundamentals of transport processes and their importance for crystal growth are given. First, principal parameters and equations of heat and mass transfer, like thermal flux, radiation and diffusion are introduced. The heat‐ and mass‐ balanced melt‐solid and solution‐solid interface velocities are derived, respectively. The today's significance of global numeric simulation for analysis of thermo‐mechanical stress and related dislocation dynamics within the growing crystal is shown. The relation between diffusion and kinetic regime is discussed. Then, thermal and solutal buoyancy‐driven and Marangoni convections are introduced. Their important interplay with the diffusion boundary layer, component and particle incorporation as well as morphological interface stability is demonstrated. Non‐steady crystallization phenomena (striations) caused by convective fluctuations are considered. Selected results of global 3D numeric modeling are shown. Finally, advanced methods to control heat and mass transfer by external forces, such as accelerated container rotation, ultrasonic vibration and magnetic fields are discussed.