欧姆接触
肖特基二极管
材料科学
肖特基势垒
基质(水族馆)
光电子学
密度泛函理论
兴奋剂
纳米技术
接口(物质)
凝聚态物理
化学
计算化学
物理
图层(电子)
接触角
复合材料
地质学
海洋学
二极管
坐滴法
作者
Alessandra Catellani,Arrigo Calzolari,Alice Ruini
摘要
By using a first principles approach based on Density Functional Theory, we present a study of the manipulation of the Al/ZnO contact, which may be turned from Ohmic to Schottky by simply including an ultrathin Au interlayer at the interface. To understand the rationale behind this contact design, we first characterize the original Al/ZnO interface, which results to be Ohmic, irrespective of the substrate termination and of eventual n-doping. Then, we identify the mechanisms that regulate the contact behavior switch upon gold insertion by highlighting the different charge transfer processes that take place at the interface.
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