Analysis of Electrical Characteristics of Oxide Semiconductor of ZnO, SnO2 and ZTO

To study the characteristics of ZTO, which is made using a target mixed ZnO:SnO 2 = 1:1, the ZnO and SnO 2 were analyzed using PL, XRD patterns, and electrical properties.Resulting characteristics were compared with the electrical characteristics of ZnO, SnO 2 , and ZTO.The electrical characteristics of ZTO were found to improve with increasing of the annealing temperature due to the high degree of crystal structures at high temperature.The crystal structure of SnO 2 was also found to increase with increasing temperatures.So, the structure of ZTO was found to be affected by the annealing temperature and the molecules of SnO 2 ; the optical property of ZTO was similar to that of ZnO.Among the ZTO films, ZTO annealed at the highest temperature showed the highest capacitance and Schottky contact.