石墨烯
兴奋剂
原子层沉积
材料科学
石墨烯泡沫
石墨烯纳米带
石墨烯
纳米技术
氧化石墨烯纸
退火(玻璃)
化学工程
图层(电子)
光电子学
复合材料
工程类
作者
Li Zheng,Xinhong Cheng,Zhongjian Wang,Chao Xia,Duo Cao,Lingyan Shen,Qian Wang,Yuehui Yu,Dashen Shen
摘要
The pre-H2O treatment and Al2O3 film growth under a two-temperature-regime mode in an oxygen-deficient atomic layer deposition (ALD) chamber can induce n-type doping of graphene, with the enhancement of electron mobility and no defect introduction to graphene. The main mechanism of n-type doping is surface charge transfer at graphene/redox interfaces during the ALD procedure. More interestingly, this n-type doping of graphene is reversible and can be recovered by thermal annealing, similar to hydrogenated graphene (graphane). This technique utilizing pre-H2O treatment and an encapsulated layer of Al2O3 achieved in an oxygen-deficient ALD chamber provides a simple and novel route to fabricate n-type doping of graphene.
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