记忆电阻器
随机性
混乱的
神经形态工程学
非线性系统
记忆晶体管
电子线路
计算机科学
组分(热力学)
算法
磁滞
电压
数学
电子工程
拓扑(电路)
人工智能
工程类
电气工程
物理
电阻随机存取存储器
人工神经网络
统计
热力学
量子力学
作者
Han Bao,Zhongyun Hua,Houzhen Li,Mo Chen,Bocheng Bao
出处
期刊:IEEE Transactions on Circuits and Systems I-regular Papers
[Institute of Electrical and Electronics Engineers]
日期:2021-06-04
卷期号:68 (11): 4534-4544
被引量:171
标识
DOI:10.1109/tcsi.2021.3082895
摘要
Regarding as a basic circuit component with special nonlinearity, memristor has been widely applied in chaotic circuits and neuromorphic circuits. However, discrete memristor (DM) has not been received much attention, yet. To this end, this paper reports a general DM model and its unified mapping model. Using the general DM model, four representations of DMs are given and their pinched hysteresis loops are exhibited. Based on the unified DM mapping model, four two-dimensional (2D) DM maps are generated and their parameter-relied and initials-relied behaviors are explored using multiple numerical measures. The results demonstrate that all the four 2D DM maps can generate hyperchaos with coexisting bi-stable or memristor initial-boosted behavior, and their sequences have excellent performance indictors. A hardware device is constructed to implement these maps and the analog voltage signals are experimentally acquired. Moreover, pseudo-random number generators (PRNGs) are designed using these DM maps and the test results show that the generated pseudo-random numbers (PRNs) have high randomness.
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