晶体缺陷
费米能级
带隙
材料科学
凝聚态物理
费米能量
化学
热力学
结晶学
物理
核物理学
电子
作者
Adisak Boonchun,Klichchupong Dabsamut,Walter R. L. Lambrecht
摘要
The native point defects are studied in LiGaO2 using hybrid functional calculations. We find that the relative energy of formation of the cation vacancies and the cation antisite defects depends strongly on the chemical potential conditions. The lowest energy defect is found to be the Ga_Li^2+ donor. It is compensated mostly by V_Li^-1and in part by Li_Ga^-2 in the more Li-rich conditions. The equilibrium carrier concentrations are found to be negligible because the Fermi level is pinned deep in the gap and this is consistent with insulating behavior in pure LiGaO2. The V_Ga has high energy under all reasonable conditions. Both the Ga_Li and the V_O are found to be negative U centers with deep 2+/0 transition levels.
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