掺杂剂活化
硅
非晶硅
多晶硅
材料科学
兴奋剂
掺杂剂
退火(玻璃)
无定形固体
分析化学(期刊)
晶体硅
光电子学
纳米技术
结晶学
化学
有机化学
图层(电子)
薄膜晶体管
复合材料
作者
Matthew B. Hartenstein,William Nemeth,Vincenzo LaSalvia,Steven P. Harvey,Harvey Guthrey,San Theingi,Matthew J. Page,David L. Young,Paul Stradins,Sumit Agarwal
出处
期刊:IEEE Journal of Photovoltaics
日期:2020-11-01
卷期号:10 (6): 1574-1581
被引量:13
标识
DOI:10.1109/jphotov.2020.3021668
摘要
Polycrystalline silicon on silicon oxide (poly-Si/SiO x ) passivating contacts enable ultrahigh-efficiency interdigitated back contact silicon solar cells. To prevent shunt between n- and p-type-doped fingers, an insulating region is required between them. We evaluate the use of intrinsic poly-Si for this isolation region. Interdigitated fingers were formed by plasma deposition of doped hydrogenated amorphous silicon through mechanically aligned shadow masks on top of a full-area intrinsic hydrogenated amorphous silicon (a-Si:H) layer. High-temperature annealing then crystallized the a-Si:H to poly-Si and drove in the dopants. Two mechanisms were identified which cause contamination of the intrinsic poly-Si gap during processing. During deposition of doped fingers, we show using secondary ion mass spectrometry and conductivity measurements that the intrinsic gap becomes contaminated by doped a-Si:H tails several nanometers thick to concentrations of ~10 20 cm -3 . Another source of contamination occurs during high-temperature annealing, where dopants desorb from doped regions and readsorb onto intrinsic a-Si:H. Both pathways reduce the resistivity of the intrinsic gap from ~10 5 to ~10 -1 Ω·cm. We show that plasma etching of the a-Si:H surface before crystallizing with a capping layer can eliminate the contamination of the intrinsic poly-Si, maintaining a resistivity of ~10 5 Ω·cm. This demonstrates masked plasma deposition as a dopant patterning method for Si solar cells.
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