JFET公司
MOSFET
材料科学
光电子学
二极管
沟槽
碳化硅
电压
晶体管
电气工程
场效应晶体管
工程类
纳米技术
冶金
图层(电子)
作者
Ping Li,Jingwei Guo,Zhi Lin,Shengdong Hu,Cong Shi,Fang Tang
标识
DOI:10.1109/ted.2021.3059393
摘要
A novel approach to inactivate the body p-i-n diode of silicon carbide (SiC) MOSFET is proposed in this article. It features a normally-OFF JFET structure embedded medially between the two p-well regions in the z-direction. When the SiC MOSFET operates in the first quadrant, the normally-OFF JFET is pinched-off, guaranteeing the excellent fundamental performance of the SiC MOSFET. While when the SiC MOSFET serves as the freewheeling diode, the channel of the normally-OFF JFET is turned on, which provides a unipolar current conduction path with low cut-in voltage, thereby inactivating the body p-i-n diode. TCAD simulation results show that, in comparison with the double trench SiC MOSFET, the cut-in voltage and the reverse recovery charge of the proposed SiC MOSFET could be reduced by 51.6% and 52.2%, respectively.
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